| PART |
Description |
Maker |
| IMD9AT108 |
NPN PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| UMG5N |
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| EMH61 |
Complex Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| EMH60 |
Complex Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| EMD72-16 |
Complex Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| EMB61 |
Complex Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| EMH51 |
Complex Digital Transistors (Bias Resistor Built-in Transistors)
|
Rohm
|
| FMA8A UMA8N EMA8 |
Emitter common (dual digital transistors)
Transistors > Complex Digital Transistors
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| EMH4 EMG4 IMH8A IMH4A UMH8N |
General purpose (dual digital transistors)
Transistors > Complex Digital Transistors
|
Rohm CO.,LTD.
|
| EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
| FML9 |
Transistors > Complex Bipolar Transistors
From old datasheet system
General purpose transistor (isolated transistor and diode)
|
Rohm CO.,LTD.
|
| UMY1N EMY1 FMY1A |
Transistors > Complex Bipolar Transistors
|
ROHM
|
